Photodiodes Modules APD

Manufacturer: Excelitas Technologies
HTTS ref.: HTS-OPT-0027
HTDS ref.: LLAM MODULE REFROIDIS ET PREAMPLIFIES
Division: Optoélectronique

Gallery and technical drawings

Description

Les modules APD sont proposés en boitier TO8 hermétique avec préamplificateur GaAs FET (C30659) et avec TEC (LLAM) pour des performances optimales signal/bruit. Ils sont proposés avec des bandes passantes de 50 MHz et 200 MHz pour s’adapter à un large éventail d’applications. Ces références sont également proposées avec l’option d’un circuit de protection pour résister à de fortes densité de puissance optique. La C30650EH est une alternative économique à la série C30659 utilisant un amplificateur bipolaire.

Nos modules APD sont des récepteurs hybrides qui comprennent un photodétecteur et un amplificateur à transimpédance dans le même boitier hermétique, ce qui favorise la détection très faible bruit.

Mesures précises et modulaires dans diverses applications optiques.

Key features

Bande passante : 50 et 200 MHz
Faible bruit
Plage spectrale : 400-1100 nm
Versions avec seuil de dommage optimisé

Technical specifications

Vn:  V  100kHz
0 C: 0 C
23 C: 23 C
45 C: 45 C
-20 C: -20 C
Model: Nominal Wavelength Detector Detector Active Comments
50 MHz: -6 50 MHz
Vop (V): Vop (V)
C30950EH: C30817EH
naverage: 3dB
Parameter: Min Max Min Max Min Max Min Max Units
Telephone: (+1) Germany Telephone: +33 (1) 6486 2824 Telephone: (+65) 6775 2022
Toll-free: (+1) 800.775.6786 Fax: (+49) 611 492 165 Telephone: (+65) 6770 4366
at 830 nm: 14 17 35 55 fW/Hz
at 900 nm: 55 90 55 80 fW/Hz
at 1064 nm: 90 125 100 150 fW/Hz
at 1300 nm: 150 180 250 375 fW/Hz
at 1550 nm: 130 160 220 330 fW/Hz
nnormalize: naverage  
Active area: 0.03 0.005 mm²
Références: Détecteur
(Silicon APD): (Silicon APD) (Silicon APD) (InGaAs APD)
Detector Type: (C30817EH APD) (C30902EH APD)
Detector type: (C30662EH APD) (C30645EH APD)
LLAM-900-R5BH: C30902EH
o With Si APD: 400 to 1100 nm
operating, TA: -40 70 -40 70 -40 70 -40 70 ˚C
peak (Note 4): 50 50 50 mW
peak (Note 5): 4 (for -1550) kW/cm²
storage, Tstg: -50 100 -50 100 -50 100 -50 100 ˚C
LLAM-1060-R8BH: C30954EH
at TA = +70˚C: 600 350 600 100 V
at TA = -40˚C: 300 210 300 50 V
Active diameter: 0.2 0.08 mm
Bandwidth range: 50 200 MHz
C30659-1060-3AH: C30956EH
C30659-900-R5BH: C30902EH
C30659-900-R8AH: C30817EH
Frequency [MHz]: Frequency [MHz]
LLAM-1060E-R8BH: C30954EH
Test conditions: Case temperature = 22˚C, Vamp = ±5 V, HV = Vop (see Note 1), RL = 50 Ω AC coupled
Wavelength [nm]: Wavelength [nm]
C30659-1060-R8BH: C30954EH
C30659-1550-R2AH: 50 MHz 1550 nm C30662EH InGaAs 0.2 mm
Output impedance: 33 40 50 33 40 50 Ω
average (Note 3): 0.1 0.1 0.1 2 mW
C30659-1500-R08BH: 200 MHz C30645EH 0.08 mm
C30659-1550E-R2AH: Enhanced damage threshold
o With InGaAs APD: 1100 to 1700 nm
www.excelitas.com: Page 10 of 10 C30659 Series-Rev.1.7-2017.07
Bandwidth Response: Type Material Diameter
C30659-1550E-R08BH: Enhanced damage threshold
22001 Dumberry Road: GmbH & Co. KG International Sales Office Singapore, Pte. Ltd.
Responsivity (kV/W): 0 C 0 C
Responsivity [kV/W]: Responsivity [kV/W]20
450.424.3300 Telephone: (+49) 611 492 430 [email protected] (Main number)
Excelitas Technologies: Excelitas Technologies Excelitas Technologies Excelitas Technologies
System bandwidth, f-3dB: 40 50 175 200 MHz
DC output offset voltage: -1 0.25 1 -1 0.25 1 VDC
Preamplifier bias voltage: ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 ±4.5 ±5.5 V
[email protected]: Fax: (+65) 6778-1752
Negative supply current (V-): 10 20 10 20 mA
Positive supply current (V+): 20 35 20 35 mA
 Typical power consumption: 150 mW
Averaged from 100 kHz to f-3dB: 45 55 20 30 nV/Hz
Vop for specified responsivity: 40 Note 1 70 40 Note 1 70 V
Normalized output noise voltage: -7
Rf (Internal feedback resistor): 68 18 kΩ
allow for ultra-low noise operation.:  LIDAR
Recovery time after overload (Note 4): 150 150 ns
C30659-900-R8AH responsivity at 900 nm: C30659-900-R5BH responsivity at 900 nm
C30659-1060-3AH responsivity at 1060 nm: C30659-1060-R8BH responsivity at 1060 nm
Nominal field of view α (see Figure 8): 145 145 Degrees
Temperature sensor sensitivity (Note 2): -1.8 -2.1 -2.4 -1.8 -2.1 -2.4 mV/˚C
Nominal field of view α’ (see Figure 8): 146 146 Degrees
Output voltage swing (1 kΩ load) (Note 5): 2 3 2 3 Vpp
Output voltage swing (50 Ω load) (Note 5): 0.7 0.9 0.7 0.9 Vpp
C30659-1550(E)-R08BH responsivity at 1550 nm: C30659-1550(E)-R2AH responsivity at 1550 nm
Temperature coefficient of Vop for constant gain: 0.2 0.2 V/˚C
C30645EH and C30662EH products. These detectors provide very good response:  Confocal microscopy
to operate at higher transimpedance than Excelitas’ regular C30950 Series.:  Analytical instrumentation
C30902EH, C30954EH and C30956EH products, while the InGaAs APDs are used in the:  Laser designation
The Si APDs used in these devices are the same as used in Excelitas’ C30817EH,:  Range finding